Power MOSFETs also have a propensity to leak current, which has a negative impact on their ability to expand globally. The MOSFET also needs a specific amount of drain to source voltage and current if these requirements are not met, a breakdown could quickly result. A high gate to source voltage further shortens the MOSFET's life and offers little to no benefit regarding RDS(on) reduction. Due to its thinness, gate oxide has a shallow breakdown threshold. The expansion of this market is hampered by limitations, including breakdown caused by gate oxide, drain to source voltage, maximum drain current, and temperature.
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